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2018 Volume 27 Issue 9
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Yi-Dong Wang, Jun Chen. 2018: Modeling capacitance voltage characteristic of TiW/p-InP Schottky barrier diode, Chinese Physics B, 27(9): 568-572. doi: 10.1088/1674-1056/27/9/097203
Citation: Yi-Dong Wang, Jun Chen. 2018: Modeling capacitance voltage characteristic of TiW/p-InP Schottky barrier diode, Chinese Physics B, 27(9): 568-572. doi: 10.1088/1674-1056/27/9/097203
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Modeling capacitance voltage characteristic of TiW/p-InP Schottky barrier diode

  • School of Electronic and Information Engineering,Soochow University,Suzhou 215006,China

  • Available Online: 01/01/2018
  • Fund Project: the National Natural Science Foundation of China(Grant 61774108)%the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China
  • The capacitance-voltage(C-V)characteristic of the TiW/p-InP Schottky barrier diodes(SBDs)is analyzed consider-ing the effects of the interface state(Nss),series resistance(Rs),and deep level defects.The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect.The fitting coefficients α and β are used to reflect the Nss and Rs on the C-V characteristics,respectively.The α decreases with the increase of frequency,while β increases with the increase of frequency.The capacitance increases with the increase of α and the decrease of β.From our model,the peak capacitance and its position can be estimated.The experimental value is found to be larger than the calculated one at the lower voltage.This phenomenon can be explained by the effect of deep level defects.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Modeling capacitance voltage characteristic of TiW/p-InP Schottky barrier diode

  • Available Online: 01/01/2018

Abstract: The capacitance-voltage(C-V)characteristic of the TiW/p-InP Schottky barrier diodes(SBDs)is analyzed consider-ing the effects of the interface state(Nss),series resistance(Rs),and deep level defects.The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect.The fitting coefficients α and β are used to reflect the Nss and Rs on the C-V characteristics,respectively.The α decreases with the increase of frequency,while β increases with the increase of frequency.The capacitance increases with the increase of α and the decrease of β.From our model,the peak capacitance and its position can be estimated.The experimental value is found to be larger than the calculated one at the lower voltage.This phenomenon can be explained by the effect of deep level defects.

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