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2019 Volume 27 Issue 2
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Hao Wu, Bao-Xing Duan, Luo-Yun Yang, Yin-Tang Yang. 2019: Theoretical analytic model for RESURF AlGaN/GaN HEMTs, Chinese Physics B, 28(2): 391-395. doi: 10.1088/1674-1056/28/2/027302
Citation: Hao Wu, Bao-Xing Duan, Luo-Yun Yang, Yin-Tang Yang. 2019: Theoretical analytic model for RESURF AlGaN/GaN HEMTs, Chinese Physics B, 28(2): 391-395. doi: 10.1088/1674-1056/28/2/027302
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Theoretical analytic model for RESURF AlGaN/GaN HEMTs

  • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

  • Fund Project: the National Basic Research Program of China(Grant 2015CB351906)%the National Natural Science Foundation of China(Grant 61774114)%the Key Program of the National Natural Science Foundation of China(Grant 61334002)%the 111 Project, China(Grant B12026)
  • In this paper, we propose a two-dimensional (2D) analytic model for the channel potential and electric field distribution of the RESURF AlGaN/GaN high electron mobility transistors (HEMTs). The model is constructed by two-dimensional Poisson's equation with appropriate boundary conditions. In the RESURF AlGaN/GaN HEMTs, we utilize the RESURF effect generated by doped negative charge in the AlGaN layer and introduce new electric field peaks in the device channels, thus, homogenizing the distribution of electric field in channel and improving the breakdown voltage of the device. In order to reveal the influence of doped negative charge on the electric field distribution, we demonstrate in detail the influences of the charge doping density and doping position on the potential and electric field distribution of the RESURF AlGaN/GaN HEMTs with double low density drain (LDD). The validity of the model is verified by comparing the results obtained from the analytical model with the simulation results from the ISE software. This analysis method gives a physical insight into the mechanism of the AlGaN/GaN HEMTs and provides reference to modeling other AlGaN/GaN HEMTs device.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Theoretical analytic model for RESURF AlGaN/GaN HEMTs

Abstract: In this paper, we propose a two-dimensional (2D) analytic model for the channel potential and electric field distribution of the RESURF AlGaN/GaN high electron mobility transistors (HEMTs). The model is constructed by two-dimensional Poisson's equation with appropriate boundary conditions. In the RESURF AlGaN/GaN HEMTs, we utilize the RESURF effect generated by doped negative charge in the AlGaN layer and introduce new electric field peaks in the device channels, thus, homogenizing the distribution of electric field in channel and improving the breakdown voltage of the device. In order to reveal the influence of doped negative charge on the electric field distribution, we demonstrate in detail the influences of the charge doping density and doping position on the potential and electric field distribution of the RESURF AlGaN/GaN HEMTs with double low density drain (LDD). The validity of the model is verified by comparing the results obtained from the analytical model with the simulation results from the ISE software. This analysis method gives a physical insight into the mechanism of the AlGaN/GaN HEMTs and provides reference to modeling other AlGaN/GaN HEMTs device.

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