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2019 Volume 27 Issue 4
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Tie-Cheng Han, Hong-Dong Zhao, Xiao-Can Peng. 2019: Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer, Chinese Physics B, 28(4): 326-331. doi: 10.1088/1674-1056/28/4/047302
Citation: Tie-Cheng Han, Hong-Dong Zhao, Xiao-Can Peng. 2019: Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer, Chinese Physics B, 28(4): 326-331. doi: 10.1088/1674-1056/28/4/047302
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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

  • School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China

  • Fund Project: the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory,China (Grant 614210701041705)
  • Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy,we propose a BGaN buffer with a B-content of 1％ to enhance two-dimensional electron gas (2DEG) confinement in a short-gate A1GaN/GaN high-electron mobility transistor (HEMT).Based on the two-dimensional TCAD simulation,the direct current (DC) and radio frequency (RF) characteristics of the AlGaN/GaN/B0.01Ga0.99N structure HEMTs are theoretically studied.Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device.The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio (LG/d)down to 6,which is much lower than that the GaN buffer device with LG/d=11 can reach.Furthermore,due to a similar manner of enhancing 2DEG confinement,the B0.01 Ga0.99N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses,and its ability to control short-channel effects (SCEs) is comparable to that of an Al0.03Ga0.97N buffer.Therefore,this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

Abstract: Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy,we propose a BGaN buffer with a B-content of 1％ to enhance two-dimensional electron gas (2DEG) confinement in a short-gate A1GaN/GaN high-electron mobility transistor (HEMT).Based on the two-dimensional TCAD simulation,the direct current (DC) and radio frequency (RF) characteristics of the AlGaN/GaN/B0.01Ga0.99N structure HEMTs are theoretically studied.Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device.The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio (LG/d)down to 6,which is much lower than that the GaN buffer device with LG/d=11 can reach.Furthermore,due to a similar manner of enhancing 2DEG confinement,the B0.01 Ga0.99N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses,and its ability to control short-channel effects (SCEs) is comparable to that of an Al0.03Ga0.97N buffer.Therefore,this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.

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