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2024 Volume 33 Issue 9

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Yunxi Qi(戚云西), Jun Zhao(赵俊), and Hui Zeng(曾晖). 2024: Strain-tuned electronic and valley-related properties in Janus monolayers of SWSiX2 (X = N, P, As), Chinese Physics B, 33(9): 096302. doi: 10.1088/1674-1056/ad6077

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Yunxi Qi(戚云西), Jun Zhao(赵俊), and Hui Zeng(曾晖). 2024: Strain-tuned electronic and valley-related properties in Janus monolayers of SWSiX₂ (X = N, P, As), Chinese Physics B, 33(9): 096302. doi: 10.1088/1674-1056/ad6077

Strain-tuned electronic and valley-related properties in Janus monolayers of SWSiX₂ (X = N, P, As)

1 New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 School of Microelectronics, Nanjing University of Science and Technology, Nanjing 210094, China

Received Date: 07/03/2024
Accepted Date: 27/05/2024
Fund Project:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62174088 and 62371238).

Abstract

Exploring novel two-dimensional (2D) valleytronic materials has an essential impact on the design of spintronic and valleytronic devices. Our first principles calculation results reveal that the Janus SWSi$X_{2}$ ($X = {\rm N}$, P, As) monolayer has excellent dynamical and thermal stability. Owing to strong spin-orbit coupling (SOC), the SWSi$X_{2}$ monolayer exhibits a valence band spin splitting of up to 0.49 eV, making it promising 2D semiconductor for valleytronic applications. The opposite Berry curvatures and optical selection rules lead to the coexistence of valley and spin Hall effects in the SWSi$X_{2}$ monolayer. Moreover, the optical transition energies can be remarkably modulated by the in-plane strains. Large tensile (compressive) in-plane strains can achieve spin flipping in the SWSiN$_{2}$ monolayer, and induce both SWSiP$_{2}$ and SWSiAs$_{2}$ monolayers transit from semiconductor to metal. Our research provides new 2D semiconductor candidates for designing high-performance valleytronic devices.
- first-principles calculations,
- two-dimensional,
- valleytronic,
- spintronic

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Strain-tuned electronic and valley-related properties in Janus monolayers of SWSiX₂ (X = N, P, As)

Received Date: 07/03/2024
Accepted Date: 27/05/2024

Fund Project:

Key words:

Abstract: Exploring novel two-dimensional (2D) valleytronic materials has an essential impact on the design of spintronic and valleytronic devices. Our first principles calculation results reveal that the Janus SWSi$X_{2}$ ($X = {\rm N}$, P, As) monolayer has excellent dynamical and thermal stability. Owing to strong spin-orbit coupling (SOC), the SWSi$X_{2}$ monolayer exhibits a valence band spin splitting of up to 0.49 eV, making it promising 2D semiconductor for valleytronic applications. The opposite Berry curvatures and optical selection rules lead to the coexistence of valley and spin Hall effects in the SWSi$X_{2}$ monolayer. Moreover, the optical transition energies can be remarkably modulated by the in-plane strains. Large tensile (compressive) in-plane strains can achieve spin flipping in the SWSiN$_{2}$ monolayer, and induce both SWSiP$_{2}$ and SWSiAs$_{2}$ monolayers transit from semiconductor to metal. Our research provides new 2D semiconductor candidates for designing high-performance valleytronic devices.

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