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Yunli Da(笪蕴力)1, †, Ruichun Luo(罗瑞春)1, †, Bao Lei(雷宝)1, Wei Ji(季威)2, and Wu Zhou(周武)1, ‡. 2024: Controlled fabrication of freestanding monolayer SiC by electron irradiation, Chinese Physics B, 33(8): 086802. doi: 10.1088/1674-1056/ad6132
Citation: Yunli Da(笪蕴力)1, †, Ruichun Luo(罗瑞春)1, †, Bao Lei(雷宝)1, Wei Ji(季威)2, and Wu Zhou(周武)1, ‡. 2024: Controlled fabrication of freestanding monolayer SiC by electron irradiation, Chinese Physics B, 33(8): 086802. doi: 10.1088/1674-1056/ad6132
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Controlled fabrication of freestanding monolayer SiC by electron irradiation

  • 1 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;

  • 2 Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing 100872, China

  • Received Date: 05/06/2024
    Accepted Date: 26/06/2024
  • Fund Project:

    This research is financially supported by the Ministry of Science and Technology (MOST) of China (Grant No. 2018YFE0202700), the Beijing Outstanding Young Scientist Program (Grant No. BJJWZYJH01201914430039), the China National Postdoctoral Program for Innovative Talents (Grant No. BX2021301), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grants No. 22XNKJ30).

  • The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has been demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. It features the advantages of precise control over the patterning of such new materials and their integration with other materials with different functionalities. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. Our in-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion, providing new insights into the atom-by-atom self-assembly of freestanding two-dimensional (2D) monolayers.
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Controlled fabrication of freestanding monolayer SiC by electron irradiation

  • Received Date: 05/06/2024
  • Accepted Date: 26/06/2024
Fund Project: 

Abstract: The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has been demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. It features the advantages of precise control over the patterning of such new materials and their integration with other materials with different functionalities. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. Our in-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion, providing new insights into the atom-by-atom self-assembly of freestanding two-dimensional (2D) monolayers.

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