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Maoyang Li(李茂洋), Chaochao Mo(莫超超), Peiyu Ji(季佩宇), Xiaoman Zhang(张潇漫), Jiali Chen(陈佳丽), Lanjian Zhuge(诸葛兰剑), Xuemei Wu(吴雪梅), Haiyun Tan(谭海云), and Tianyuan Huang(黄天源). 2024: Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions, Chinese Physics B, 33(10): 108102. doi: 10.1088/1674-1056/ad62df
Citation: Maoyang Li(李茂洋), Chaochao Mo(莫超超), Peiyu Ji(季佩宇), Xiaoman Zhang(张潇漫), Jiali Chen(陈佳丽), Lanjian Zhuge(诸葛兰剑), Xuemei Wu(吴雪梅), Haiyun Tan(谭海云), and Tianyuan Huang(黄天源). 2024: Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions, Chinese Physics B, 33(10): 108102. doi: 10.1088/1674-1056/ad62df
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Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions

  • 1 School of Physical Science and Technology, Soochow University, Suzhou 215000, China;

  • 2 Suzhou Maxwell Technologies Co., Ltd., Suzhou 215000, China;

  • 3 Jiangsu Key Laboratory of Frontier Material Physics and Devices, Suzhou 215000, China;

  • 4 School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215000, China;

  • 5 Analysis and Testing Center, Soochow University, Suzhou 215000, China;

  • 6 School of Optical and Electronic Information, Suzhou City University & Suzhou Key Laboratory of Biophotonics, Suzhou 215104, China

  • Received Date: 10/05/2024
    Accepted Date: 03/07/2024
  • Fund Project:

    This work was supported by the National Key R&D Program of China (Grant No. 2022YFE03050001) and the National Natural Science Foundation of China (Grant Nos. 12175160 and 12305284).

  • We deposited indium-tin-oxide (ITO) films on silicon and quartz substrates by magnetron sputtering technology in pure argon. Using electrostatic quadrupole plasma diagnostic technology, we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface, with special attention to the production of high-energy negative oxygen ions, and elucidate the mechanism behind its production. At the same time, the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films. Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide (TCO) thin films, this study provides valuable physical understanding of optimization of TCO thin film deposition process.
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Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions

  • Received Date: 10/05/2024
  • Accepted Date: 03/07/2024
Fund Project: 

Abstract: We deposited indium-tin-oxide (ITO) films on silicon and quartz substrates by magnetron sputtering technology in pure argon. Using electrostatic quadrupole plasma diagnostic technology, we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface, with special attention to the production of high-energy negative oxygen ions, and elucidate the mechanism behind its production. At the same time, the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films. Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide (TCO) thin films, this study provides valuable physical understanding of optimization of TCO thin film deposition process.

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