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Siqi Li(李思琦), Pengfei Shao(邵鹏飞), Xiao Liang(梁潇), Songlin Chen(陈松林), Zhenhua Li(李振华), Xujun Su(苏旭军), Tao Tao(陶涛), Zili Xie(谢自力), Bin Liu(刘斌), M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Rong Zhang(张荣), and Ke Wang(王科). 2024: Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition, Chinese Physics B, 33(12): 126801. doi: 10.1088/1674-1056/ad84cc
Citation: Siqi Li(李思琦), Pengfei Shao(邵鹏飞), Xiao Liang(梁潇), Songlin Chen(陈松林), Zhenhua Li(李振华), Xujun Su(苏旭军), Tao Tao(陶涛), Zili Xie(谢自力), Bin Liu(刘斌), M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Rong Zhang(张荣), and Ke Wang(王科). 2024: Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition, Chinese Physics B, 33(12): 126801. doi: 10.1088/1674-1056/ad84cc
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Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition

  • 1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210000, China;

  • 2 School of Opto-Electronic Engineering, Zaozhuang University, Zaozhuang 277160, China;

  • 3 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215000, China;

  • 4 RIKEN, Saitama, Japan

  • Received Date: 27/07/2024
    Accepted Date: 23/09/2024
  • Fund Project:

    Project supported by the National Key R&D Program of China (Grant No. 2022YFB3605600), the National Natural Science Foundation of China (Grant No. 61974065), the Key R&D Project of Jiangsu Province, China (Grant Nos. BE2020004-3 and BE2021026), Postdoctoral Fellowship Program of CPSF (Grant No. GZC20231098), the Jiangsu Special Professorship, Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics.

  • We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of (AlN)$m$/(GaN)$n$ superlattices (SLs), where $m$ and $n$ represent the numbers of monolayers. Clear satellite peaks observed in XRD 2$\theta $-$\omega $ scans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces. For (AlN)$m$/(GaN)$n$ SLs with an average Al composition of 50%, we have obtained an electron density up to 4.48$\times10^{19}$ cm$^{-3}$ and a resistivity of 0.002 $\Omega\cdot$cm, and a hole density of 1.83$\times10^{18}$ cm$^{-3}$ with a resistivity of 3.722 $\Omega \cdot$cm, both at room temperature. Furthermore, the (AlN)$m$/(GaN)$n$ SLs exhibit a blue shift for their photoluminescence peaks, from 403 nm to 318 nm as GaN is reduced from $n=11$ to $n=4$ MLs, reaching the challenging UVB wavelength range. The results demonstrate that the (AlN)$m$/(GaN)$n$ SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN, making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.
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Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition

  • Received Date: 27/07/2024
  • Accepted Date: 23/09/2024
Fund Project: 

Abstract: We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of (AlN)$m$/(GaN)$n$ superlattices (SLs), where $m$ and $n$ represent the numbers of monolayers. Clear satellite peaks observed in XRD 2$\theta $-$\omega $ scans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces. For (AlN)$m$/(GaN)$n$ SLs with an average Al composition of 50%, we have obtained an electron density up to 4.48$\times10^{19}$ cm$^{-3}$ and a resistivity of 0.002 $\Omega\cdot$cm, and a hole density of 1.83$\times10^{18}$ cm$^{-3}$ with a resistivity of 3.722 $\Omega \cdot$cm, both at room temperature. Furthermore, the (AlN)$m$/(GaN)$n$ SLs exhibit a blue shift for their photoluminescence peaks, from 403 nm to 318 nm as GaN is reduced from $n=11$ to $n=4$ MLs, reaching the challenging UVB wavelength range. The results demonstrate that the (AlN)$m$/(GaN)$n$ SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN, making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.

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