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Jiale Lu(卢家乐)†, Haofeng Ran(冉皓丰), Dirui Xie(谢頔睿), Guangdong Zhou(周广东)‡, and Xiaofang Hu(胡小方)§. 2025: A physical memristor model for Pavlovian associative memory, Chinese Physics B, 34(1): 018703. doi: 10.1088/1674-1056/ad8b37
Citation: Jiale Lu(卢家乐)†, Haofeng Ran(冉皓丰), Dirui Xie(谢頔睿), Guangdong Zhou(周广东)‡, and Xiaofang Hu(胡小方)§. 2025: A physical memristor model for Pavlovian associative memory, Chinese Physics B, 34(1): 018703. doi: 10.1088/1674-1056/ad8b37
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A physical memristor model for Pavlovian associative memory

  • College of Artificial Intelligence, Southwest University, Chongqing 400712, China

  • Received Date: 09/09/2024
    Accepted Date: 21/10/2024
  • Fund Project:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 62476230 and 61976246), the Natural Science Foundation of Chongqing (Grant No. CSTB2023NSCQ-MSX0018), and Fundamental Research Funds for the Central Universities (Grant No. SWUKR22046).

  • Brain-inspired intelligence is considered to be a computational model with the most promising potential to overcome the shortcomings of the von Neumann architecture, making it a current research hotspot. Due to advantages such as nonvolatility, high density, low power consumption, and high response ratio, memristors are regarded as devices with promising applications in brain-inspired intelligence. This paper proposes a physical Ag/HfO$_{x}$/FeO$_{x}$/Pt memristor model. The Ag/HfO$_{x}$/FeO$_{x}$/Pt memristor is first fabricated using magnetron sputtering, and its internal principles and characteristics are then thoroughly analyzed. Furthermore, we construct a corresponding physical memristor model which achieves a simulation accuracy of up to 99.72% for the physical memristor. We design a fully functional Pavlovian associative memory circuit, realizing functions including generalization, primary differentiation, secondary differentiation, and forgetting. Finally, the circuit is validated through PSPICE simulation and analysis.
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A physical memristor model for Pavlovian associative memory

  • Received Date: 09/09/2024
  • Accepted Date: 21/10/2024
Fund Project: 

Abstract: Brain-inspired intelligence is considered to be a computational model with the most promising potential to overcome the shortcomings of the von Neumann architecture, making it a current research hotspot. Due to advantages such as nonvolatility, high density, low power consumption, and high response ratio, memristors are regarded as devices with promising applications in brain-inspired intelligence. This paper proposes a physical Ag/HfO$_{x}$/FeO$_{x}$/Pt memristor model. The Ag/HfO$_{x}$/FeO$_{x}$/Pt memristor is first fabricated using magnetron sputtering, and its internal principles and characteristics are then thoroughly analyzed. Furthermore, we construct a corresponding physical memristor model which achieves a simulation accuracy of up to 99.72% for the physical memristor. We design a fully functional Pavlovian associative memory circuit, realizing functions including generalization, primary differentiation, secondary differentiation, and forgetting. Finally, the circuit is validated through PSPICE simulation and analysis.

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