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Guan-Lin Liu(刘冠麟), Ji-Lian Xu(徐辑廉), Peng-Tao Jing(景鹏涛), Jing-Jing Shao(邵京京), Xu Guo(郭旭), Yun-Tao Wu(吴韵涛), Feng Qin(覃凤), Zhen Cheng(程祯), Deming Liu(刘德明), Yang Bao(鲍洋), Hai Xu(徐海), Li-Gong Zhang(张立功), Da Zhan(詹达), Jia-Xu Yan(闫家旭), Lei Liu(刘雷), and De-Zhen Shen(申德振). 2025: Effects of helium ion irradiation and thermal annealing on the optical and structural properties of hexagonal boron nitride, Chinese Physics B, 34(5): 057801. doi: 10.1088/1674-1056/adbee7
Citation: Guan-Lin Liu(刘冠麟), Ji-Lian Xu(徐辑廉), Peng-Tao Jing(景鹏涛), Jing-Jing Shao(邵京京), Xu Guo(郭旭), Yun-Tao Wu(吴韵涛), Feng Qin(覃凤), Zhen Cheng(程祯), Deming Liu(刘德明), Yang Bao(鲍洋), Hai Xu(徐海), Li-Gong Zhang(张立功), Da Zhan(詹达), Jia-Xu Yan(闫家旭), Lei Liu(刘雷), and De-Zhen Shen(申德振). 2025: Effects of helium ion irradiation and thermal annealing on the optical and structural properties of hexagonal boron nitride, Chinese Physics B, 34(5): 057801. doi: 10.1088/1674-1056/adbee7
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Effects of helium ion irradiation and thermal annealing on the optical and structural properties of hexagonal boron nitride

  • 1 State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;

  • 2 University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China

  • Received Date: 22/01/2025
    Accepted Date: 25/02/2025
  • Fund Project:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11727902, 12074372, 12174385, 12334014, and 12304112).

  • PACS: 78.30.-j; 78.67.-n; 61.72.J-; 81.05.-t

  • Hexagonal boron nitride (h-BN) has emerged as a promising two-dimensional material for quantum and optoelectronic applications, with its unique ability to host engineered defects enabling single-photon emission and spin manipulation. This study investigates defect formation in h-BN using focused helium ion beam (He$^{+}$ FIB) irradiation and post-annealing treatments. We demonstrate that helium ion irradiation at doses up to $2\times 10^9$ ions/μm$^2$ does not induce phase transitions or amorphization. Spectroscopic analyses, including differential reflectance spectroscopy (DRS), photoluminescence (PL), and Raman spectroscopy, reveal substantial defect formation and structural modifications. Notably, the irradiation induces a softening of in-plane and interlayer phonon modes, characterized by frequency redshifts of 10.5 cm$^{-1}$ and 3.2 cm$^{-1}$, respectively. While high-temperature thermal annealing mitigates lattice defects and facilitates single-photon emission, the E$_{\rm 2g}$ peak width remains 38% broader and the shear mode peak width is 60% broader compared to pre-annealing conditions in the Raman spectra, indicating residual structural degradation. These findings provide insights into defect engineering mechanisms in h-BN, offering guidance for optimizing processing conditions and advancing quantum and optoelectronic device technologies.
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Effects of helium ion irradiation and thermal annealing on the optical and structural properties of hexagonal boron nitride

  • Received Date: 22/01/2025
  • Accepted Date: 25/02/2025
Fund Project: 

Abstract: Hexagonal boron nitride (h-BN) has emerged as a promising two-dimensional material for quantum and optoelectronic applications, with its unique ability to host engineered defects enabling single-photon emission and spin manipulation. This study investigates defect formation in h-BN using focused helium ion beam (He$^{+}$ FIB) irradiation and post-annealing treatments. We demonstrate that helium ion irradiation at doses up to $2\times 10^9$ ions/μm$^2$ does not induce phase transitions or amorphization. Spectroscopic analyses, including differential reflectance spectroscopy (DRS), photoluminescence (PL), and Raman spectroscopy, reveal substantial defect formation and structural modifications. Notably, the irradiation induces a softening of in-plane and interlayer phonon modes, characterized by frequency redshifts of 10.5 cm$^{-1}$ and 3.2 cm$^{-1}$, respectively. While high-temperature thermal annealing mitigates lattice defects and facilitates single-photon emission, the E$_{\rm 2g}$ peak width remains 38% broader and the shear mode peak width is 60% broader compared to pre-annealing conditions in the Raman spectra, indicating residual structural degradation. These findings provide insights into defect engineering mechanisms in h-BN, offering guidance for optimizing processing conditions and advancing quantum and optoelectronic device technologies.

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