2009 Volume 26 Issue 7
Article Contents

JIANG Xiao-Shu, MI Shu, SUN eeng-Jun, LU Yuan, LIANG Jiu-Qing. 2009: Bulk Modulus and Electronic Band Structure of ZnGa2X4 (X=S,Se): a First-Principles Study, Chinese Physics Letters, 26(7): 256-258.
Citation: JIANG Xiao-Shu, MI Shu, SUN eeng-Jun, LU Yuan, LIANG Jiu-Qing. 2009: Bulk Modulus and Electronic Band Structure of ZnGa2X4 (X=S,Se): a First-Principles Study, Chinese Physics Letters, 26(7): 256-258.

Bulk Modulus and Electronic Band Structure of ZnGa2X4 (X=S,Se): a First-Principles Study

  • Available Online: 30/07/2009
  • Fund Project: the National Natural Science Foundation of China under Grant No 10604040)%SRF for ROCS, SEM, the YSRFof Shanxi Province under Grant No 2007021002, and the Oversea Science Foundation of Shanxi
  • First-principles local density functional calculations are presented for the compounds ZnGa2X4 (X = S, Se). We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters axe optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa2X4 by fitting the Birch-Murnaghan's equation of state. The extended Cohen's empirical formula agrees well with our ab initio results.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Bulk Modulus and Electronic Band Structure of ZnGa2X4 (X=S,Se): a First-Principles Study

Abstract: First-principles local density functional calculations are presented for the compounds ZnGa2X4 (X = S, Se). We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters axe optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa2X4 by fitting the Birch-Murnaghan's equation of state. The extended Cohen's empirical formula agrees well with our ab initio results.

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