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2009 Volume 26 Issue 6
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CHEN Ting, HONG Tao, PAN Jiao-Qing, CHEN Wei-Xi, CHENG Yuan-Bing, WANG Yang, MA Xiao-Bo, LIU Wei-Li, ZHAO Ling-Juan, RAN Guang-Zhao, WANG Wei, QIN Guo-Gang. 2009: Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding, Chinese Physics Letters, 26(6): 149-151.
Citation: CHEN Ting, HONG Tao, PAN Jiao-Qing, CHEN Wei-Xi, CHENG Yuan-Bing, WANG Yang, MA Xiao-Bo, LIU Wei-Li, ZHAO Ling-Juan, RAN Guang-Zhao, WANG Wei, QIN Guo-Gang. 2009: Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding, Chinese Physics Letters, 26(6): 149-151.
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Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

  • State Key Lab for Mesoscopic Physics and School of Physics,Peking University,Beijing 100871

  • Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083

  • State Key Laboratory of Functional Materials for Informatics,Laboratory of Nano Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050

  • Available Online: 30/06/2009
  • Fund Project: the National Natural Science Foundation of China under Grant Nos 10874001,50732001,10874012 and 60877022,and the National Basic Research Program of China under Grant No 2007CB613402
  • A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding.A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure.When electrically pumped at room temperature,the laser operates with a threshold current density of 2.9 kA/cm2 and a slope efficiency of 0.02 W/A.The 1542nm laser output exits mainly from the Si waveguide.
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通讯作者: 陈斌, bchen63@163.com
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

  • Available Online: 30/06/2009

Abstract: A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding.A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure.When electrically pumped at room temperature,the laser operates with a threshold current density of 2.9 kA/cm2 and a slope efficiency of 0.02 W/A.The 1542nm laser output exits mainly from the Si waveguide.

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