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2007 Volume 24 Issue 11
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WANG Chong, LIU Zhao-Lin, CHEN Xue-Mei, XIA Chang-Sheng, ZHANG Shu, YANG Yu, LU Wei. 2007: Optimum Indium Concentration for Growth of 1.3μm InAs/InxGa1-xAs Quantum Dots in a Well, Chinese Physics Letters, 24(11): 3260-3263.
Citation: WANG Chong, LIU Zhao-Lin, CHEN Xue-Mei, XIA Chang-Sheng, ZHANG Shu, YANG Yu, LU Wei. 2007: Optimum Indium Concentration for Growth of 1.3μm InAs/InxGa1-xAs Quantum Dots in a Well, Chinese Physics Letters, 24(11): 3260-3263.
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Optimum Indium Concentration for Growth of 1.3μm InAs/InxGa1-xAs Quantum Dots in a Well

  • Research Institute of Engineering and Technology, Yunnan University, Kunming 650091;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083

  • National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083

  • Research Center for Detectors, Kunming Institute of Physics, Kunming 650034

  • Research Institute of Engineering and Technology, Yunnan University, Kunming 650091

  • Available Online: 30/11/2007
  • Fund Project: the National Natural Science Foundation of China under Grant No 60567001, and the Cultivated Foundation for the 'Academic Cadreman of Yunnan University'
  • Five InAs/InxGai-xAs quantum dots in a well (DWELL) with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence (PL) experiments indicate that the ground state peaks of InAs/Ino. 15 Gao.85As and InAs/In0.22 Ga0.78 As DWELLs shift to 1.31 and 1.33 μm, respectively. The optical properties are investigated by using the PL and piezoreBectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.
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Optimum Indium Concentration for Growth of 1.3μm InAs/InxGa1-xAs Quantum Dots in a Well

  • Available Online: 30/11/2007

Abstract: Five InAs/InxGai-xAs quantum dots in a well (DWELL) with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence (PL) experiments indicate that the ground state peaks of InAs/Ino. 15 Gao.85As and InAs/In0.22 Ga0.78 As DWELLs shift to 1.31 and 1.33 μm, respectively. The optical properties are investigated by using the PL and piezoreBectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.

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