ZHOU You-Hua, YANG Guang, ZHANG Zhi-Hua, LONG Hua, DUAN Xiao-Feng, GAO Yi-Hua, ZHENG Qi-Guang, LU Pei-Xiang. 2007: Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation, Chinese Physics Letters, 24(2): 563-566.
Citation: |
ZHOU You-Hua, YANG Guang, ZHANG Zhi-Hua, LONG Hua, DUAN Xiao-Feng, GAO Yi-Hua, ZHENG Qi-Guang, LU Pei-Xiang. 2007: Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation, Chinese Physics Letters, 24(2): 563-566.
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Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation
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Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074;School of Physics and Information Engineering, Jianghan University, Wuhan 430056
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Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
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Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences,Beijing 100080
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Available Online:
28/02/2007
- Fund Project:
the National Natural Science Foundation of China under Grant No 10604018, the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20060487006, and the Youth Foundation of Wuhan City under Grant No
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Abstract
Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition (FsPLD) with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV-VIS-NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85 eV. The two most intense lines of Raman scattering peaked at 181.3 cm-1 and 235.6 cm-1 for the film on fused quartz, and at 191.2 cm-1 and 243.8 cm-1 for the film on Si (100), are observed.
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