2007 Volume 24 Issue 2
Article Contents

ZHOU You-Hua, YANG Guang, ZHANG Zhi-Hua, LONG Hua, DUAN Xiao-Feng, GAO Yi-Hua, ZHENG Qi-Guang, LU Pei-Xiang. 2007: Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation, Chinese Physics Letters, 24(2): 563-566.
Citation: ZHOU You-Hua, YANG Guang, ZHANG Zhi-Hua, LONG Hua, DUAN Xiao-Feng, GAO Yi-Hua, ZHENG Qi-Guang, LU Pei-Xiang. 2007: Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation, Chinese Physics Letters, 24(2): 563-566.

Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation

  • Available Online: 28/02/2007
  • Fund Project: the National Natural Science Foundation of China under Grant No 10604018, the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20060487006, and the Youth Foundation of Wuhan City under Grant No
  • Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition (FsPLD) with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV-VIS-NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85 eV. The two most intense lines of Raman scattering peaked at 181.3 cm-1 and 235.6 cm-1 for the film on fused quartz, and at 191.2 cm-1 and 243.8 cm-1 for the film on Si (100), are observed.
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Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation

Abstract: Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition (FsPLD) with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV-VIS-NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85 eV. The two most intense lines of Raman scattering peaked at 181.3 cm-1 and 235.6 cm-1 for the film on fused quartz, and at 191.2 cm-1 and 243.8 cm-1 for the film on Si (100), are observed.

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