2004 Volume 21 Issue 9
Article Contents

DU Yu-Lei(杜宇雷), CHEN Guang(陈光), ZHANG Ming-Sheng(张明生). 2004: Raman Study of Low-Temperature Phase Transitions in Polycrystalline Bi4Ti3O12 Thin Films, Chinese Physics Letters, 21(9): 1819-1821.
Citation: DU Yu-Lei(杜宇雷), CHEN Guang(陈光), ZHANG Ming-Sheng(张明生). 2004: Raman Study of Low-Temperature Phase Transitions in Polycrystalline Bi4Ti3O12 Thin Films, Chinese Physics Letters, 21(9): 1819-1821.

Raman Study of Low-Temperature Phase Transitions in Polycrystalline Bi4Ti3O12 Thin Films

  • Available Online: 30/09/2004
  • Fund Project: the National Natural Science Foundation of China under Grant No 10174034, and the Natural Science Foundation of Jiangsu Province under BK2001053
  • Polycrystalline Bi4Ti3O12 thin films were prepared on fused quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by x-ray diffraction and Raman spectroscopy. The two broad Raman bands centred at 57 and 93cm-1 at 300K break up into clusters of several sharp Raman peaks at 90 K. The temperature dependence of Raman spectra indicates the occurrence of monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi4 Tis O12 thin films.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Raman Study of Low-Temperature Phase Transitions in Polycrystalline Bi4Ti3O12 Thin Films

Abstract: Polycrystalline Bi4Ti3O12 thin films were prepared on fused quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by x-ray diffraction and Raman spectroscopy. The two broad Raman bands centred at 57 and 93cm-1 at 300K break up into clusters of several sharp Raman peaks at 90 K. The temperature dependence of Raman spectra indicates the occurrence of monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi4 Tis O12 thin films.

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