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2004 Volume 21 Issue 4
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ZHANG Ting(张挺), LIU Bo(刘波), XIA Ji-Lin(夏吉林), SONG Zhi-Tang(宋志棠), FENG Song-Lin(封松林), CHEN Bomy(陈宝明). 2004: Structure and Electrical Properties of Ge2Sb2Te5 Thin Film Used for Ovonic Unified Memory, Chinese Physics Letters, 21(4): 741-743.
Citation: ZHANG Ting(张挺), LIU Bo(刘波), XIA Ji-Lin(夏吉林), SONG Zhi-Tang(宋志棠), FENG Song-Lin(封松林), CHEN Bomy(陈宝明). 2004: Structure and Electrical Properties of Ge2Sb2Te5 Thin Film Used for Ovonic Unified Memory, Chinese Physics Letters, 21(4): 741-743.
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Structure and Electrical Properties of Ge2Sb2Te5 Thin Film Used for Ovonic Unified Memory

  • Research Center of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050

  • Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA

  • Available Online: 30/04/2004
  • Fund Project: the National High Technology Programme of China under Grant No 2003AA32720, the Shanghai Nanotechnology Promotion Centre(0352nm016, 0359nm004, 0252nm084)%China Postdoctoral Foundation, K. C. Wong Education Foundation%the Specia
  • Annealing temperature effects on the structure and electrical resistance of Ge2Sb2 Te5 thin film were studied. The crystallization and melting temperature of the thin film are about 175 ℃ and 610 ℃ respectively. The structure of the as-deposited and the annealed film at different annealing temperatures are identified by the x-ray diffraction method. The thin film changes from an amorphous state to the fcc structure at about 200 ℃, and then changes into the hexagonal close-packed (hcp) structure at about 400 ℃. Electrical resistance of as-deposited thin film reaches as high as 1.7 × 108 Ω/sq. Then it decreases to 1.6 × 104 Ω/sq and 165Ω/sq after the annealing process at 250℃ and 400℃ respectively. The current-voltage curve of the Ge2Sb2Te5 thin film is also investigated.Due to the large resistance difference between the amorphous, the fcc crystalline and the hcp crystalline states,Ge2Sb2 Te5 film may be used to realize multilevel storage for Ovonic unified memory.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Structure and Electrical Properties of Ge2Sb2Te5 Thin Film Used for Ovonic Unified Memory

  • Available Online: 30/04/2004

Abstract: Annealing temperature effects on the structure and electrical resistance of Ge2Sb2 Te5 thin film were studied. The crystallization and melting temperature of the thin film are about 175 ℃ and 610 ℃ respectively. The structure of the as-deposited and the annealed film at different annealing temperatures are identified by the x-ray diffraction method. The thin film changes from an amorphous state to the fcc structure at about 200 ℃, and then changes into the hexagonal close-packed (hcp) structure at about 400 ℃. Electrical resistance of as-deposited thin film reaches as high as 1.7 × 108 Ω/sq. Then it decreases to 1.6 × 104 Ω/sq and 165Ω/sq after the annealing process at 250℃ and 400℃ respectively. The current-voltage curve of the Ge2Sb2Te5 thin film is also investigated.Due to the large resistance difference between the amorphous, the fcc crystalline and the hcp crystalline states,Ge2Sb2 Te5 film may be used to realize multilevel storage for Ovonic unified memory.

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