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2004 Volume 21 Issue 1
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YI Wan-Bing(易万兵), CHEN Jing(陈静), CHEN Meng(陈猛), WANG Xi(王曦), ZOU Shi-Chang(邹世昌). 2004: Effect of Hydrogen Implantation on SIMOX SOI Materials, Chinese Physics Letters, 21(1): 149-152.
Citation: YI Wan-Bing(易万兵), CHEN Jing(陈静), CHEN Meng(陈猛), WANG Xi(王曦), ZOU Shi-Chang(邹世昌). 2004: Effect of Hydrogen Implantation on SIMOX SOI Materials, Chinese Physics Letters, 21(1): 149-152.
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Effect of Hydrogen Implantation on SIMOX SOI Materials

  • Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050

  • Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050;Shanghai Simgui Technology Co., Ltd., Jiading, Shanghai 201821

  • Available Online: 30/01/2004
  • Fund Project: the National Natural Science Foundation of China(59925205)%the Basic Research Program of Shanghai Government(02DJ14069)
  • Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI)wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer.Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79%broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation.The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Effect of Hydrogen Implantation on SIMOX SOI Materials

  • Available Online: 30/01/2004

Abstract: Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI)wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer.Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79%broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation.The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.

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