2003 Volume 20 Issue 11
Article Contents

LIU Xiao-Jun(刘晓峻), MORITOMO Yutaka(守友浩). 2003: Electronic State of Bismuth in BaBiO3 up to 9 Gpa Investigated by Optical Spectroscopy, Chinese Physics Letters, 20(11): 2027-2029.
Citation: LIU Xiao-Jun(刘晓峻), MORITOMO Yutaka(守友浩). 2003: Electronic State of Bismuth in BaBiO3 up to 9 Gpa Investigated by Optical Spectroscopy, Chinese Physics Letters, 20(11): 2027-2029.

Electronic State of Bismuth in BaBiO3 up to 9 Gpa Investigated by Optical Spectroscopy

  • Available Online: 30/11/2003
  • Fund Project: the Scientific Research Foundation for the Returned Overseas Chinese Scholars from the Ministry of Education of China
  • Effects of hydrostatic pressure on the mixed-valence(MV)bismuth complex BaBiOa have been investigated up to ~9 GPa by means of high-pressure Raman scattering and absorption spectra at 300K.The pressure-induced hardening behaviour of the Bi-O stretching mode suggests that the predicted pressure-induced MV to the singlevalence(SV)phase change cannot occur.Investigation of absorption spectra with pressure shows the enhanced optical gap Egap,which further indicates the remained MV state of Bi ions.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Electronic State of Bismuth in BaBiO3 up to 9 Gpa Investigated by Optical Spectroscopy

Abstract: Effects of hydrostatic pressure on the mixed-valence(MV)bismuth complex BaBiOa have been investigated up to ~9 GPa by means of high-pressure Raman scattering and absorption spectra at 300K.The pressure-induced hardening behaviour of the Bi-O stretching mode suggests that the predicted pressure-induced MV to the singlevalence(SV)phase change cannot occur.Investigation of absorption spectra with pressure shows the enhanced optical gap Egap,which further indicates the remained MV state of Bi ions.

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