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2003 Volume 20 Issue 10
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GONG Zheng(龚政), FANG Zhi-Dan(方志丹), MIAO Zhen-Hua(苗振华), NIU Zhi-Chuan(牛智川), FENG Song-Lin(封松林). 2003: Self-Organized InAs Quantum Wires on GaAs (331)A Substrates, Chinese Physics Letters, 20(10): 1819-1821.
Citation: GONG Zheng(龚政), FANG Zhi-Dan(方志丹), MIAO Zhen-Hua(苗振华), NIU Zhi-Chuan(牛智川), FENG Song-Lin(封松林). 2003: Self-Organized InAs Quantum Wires on GaAs (331)A Substrates, Chinese Physics Letters, 20(10): 1819-1821.
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Self-Organized InAs Quantum Wires on GaAs (331)A Substrates

  • National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083

  • Available Online: 30/10/2003
  • Fund Project: the National Natural Science Foundation of China under Grant Nos 90201026, 60025410, and 60176006, and the National High Technology Research and Development Program under Grant No 2002AA302107
  • Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs Q WRs was saturated by the terrace width (i.e., 90nm) while the size alongthe step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9nm to 13nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Self-Organized InAs Quantum Wires on GaAs (331)A Substrates

  • Available Online: 30/10/2003

Abstract: Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs Q WRs was saturated by the terrace width (i.e., 90nm) while the size alongthe step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9nm to 13nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

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