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2009 Volume 18 Issue 3
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Wang Cai-Lin, Sun Jun. 2009: An oxide filled extended trench gate super junction MOSFET structure, Chinese Physics B, 18(3): 1231-1236.
Citation: Wang Cai-Lin, Sun Jun. 2009: An oxide filled extended trench gate super junction MOSFET structure, Chinese Physics B, 18(3): 1231-1236.
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An oxide filled extended trench gate super junction MOSFET structure

  • Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, China

  • Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, China;Technologies Corporation, CSMC, Wuxi 214061, China

  • Available Online: 30/03/2009
  • Fund Project: the Doctor Scientific Research Start-up Foundation of Xi'an University of Technology of China
  • This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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An oxide filled extended trench gate super junction MOSFET structure

  • Available Online: 30/03/2009

Abstract: This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.

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