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2007 Volume 16 Issue 6
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Guo Hui, Zhang Yi-Men, Qiao Da-Yong, Sun Lei, Zhang Yu-Ming. 2007: The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide, Chinese Physics B, 16(6): 1753-1756.
Citation: Guo Hui, Zhang Yi-Men, Qiao Da-Yong, Sun Lei, Zhang Yu-Ming. 2007: The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide, Chinese Physics B, 16(6): 1753-1756.
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The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

  • Microelectronic School, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

  • Micro and Nano Electromechanical Systems Laboratory, Northwestern Polytechnical University, Xi'an 710072, China

  • Available Online: 30/06/2007
  • Fund Project: the National Basic Research Program of China(Grant 2002CB311904)%the National Defense Basic Research Program of China(Grant 51327010101)%the National Natural Science Foundation of China(Grant 60376001)
  • This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure are formed on N-wells created by N+ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance pc of NiSi contact to n-type 6H-SiC as low as 1.78×1O-6Ωcm2 is achieved after a two-step annealing at 350℃ for 20 min and 950℃ for 3 min in N2. And 3.84×1O-6Ωcm2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N+ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

  • Available Online: 30/06/2007

Abstract: This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure are formed on N-wells created by N+ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance pc of NiSi contact to n-type 6H-SiC as low as 1.78×1O-6Ωcm2 is achieved after a two-step annealing at 350℃ for 20 min and 950℃ for 3 min in N2. And 3.84×1O-6Ωcm2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N+ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.

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