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SOI材料中绝缘层界面处离子注入氟的SIMS剖析

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方培源, 曹永明. 2005: SOI材料中绝缘层界面处离子注入氟的SIMS剖析, 质谱学报, 26(z1): 31-32,96. doi: 10.3969/j.issn.1004-2997.2005.z1.016
引用本文: 方培源, 曹永明. 2005: SOI材料中绝缘层界面处离子注入氟的SIMS剖析, 质谱学报, 26(z1): 31-32,96. doi: 10.3969/j.issn.1004-2997.2005.z1.016
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FANG Pei-yuan, CAO Yong-ming. 2005: SIMS Analysis on Ion Implantation of Fluorine at Interface between Top Silicon and Insulator Layers in SOI Materials, Journal of Chinese Mass Spectrometry Society, 26(z1): 31-32,96. doi: 10.3969/j.issn.1004-2997.2005.z1.016
Citation: FANG Pei-yuan, CAO Yong-ming. 2005: SIMS Analysis on Ion Implantation of Fluorine at Interface between Top Silicon and Insulator Layers in SOI Materials, Journal of Chinese Mass Spectrometry Society, 26(z1): 31-32,96. doi: 10.3969/j.issn.1004-2997.2005.z1.016
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SOI材料中绝缘层界面处离子注入氟的SIMS剖析

  • 复旦大学材料科学系,上海,200433

SIMS Analysis on Ion Implantation of Fluorine at Interface between Top Silicon and Insulator Layers in SOI Materials

  • 摘要: Silicon-on-insulator (SOI) is well known as "new technology of Si semiconductor IC process in 21 Contrary". Recently, SOI materials have been identified as the first choice of the semiconductor materials for fabricating low voltage and low power circuits. In order to improve the working performance of the SOI circuit under the radiating circumstance, ion implantation of fluorine impurity into the insulator layers in SOI materials is used for hardening the thermal gate oxide layer. Proper implantation depth of fluorine would further improve radiate resistance performance of the SOI circuit. This paper describes the SIMS analysis results of fluorine impurity implantation profile at the interface between top silicon layer and oxide insulator layer.
    Abstract: Silicon-on-insulator (SOI) is well known as "new technology of Si semiconductor IC process in 21 Contrary". Recently, SOI materials have been identified as the first choice of the semiconductor materials for fabricating low voltage and low power circuits. In order to improve the working performance of the SOI circuit under the radiating circumstance, ion implantation of fluorine impurity into the insulator layers in SOI materials is used for hardening the thermal gate oxide layer. Proper implantation depth of fluorine would further improve radiate resistance performance of the SOI circuit. This paper describes the SIMS analysis results of fluorine impurity implantation profile at the interface between top silicon layer and oxide insulator layer.
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  • 刊出日期:  2005-12-30

SOI材料中绝缘层界面处离子注入氟的SIMS剖析

  • 复旦大学材料科学系,上海,200433

摘要: Silicon-on-insulator (SOI) is well known as "new technology of Si semiconductor IC process in 21 Contrary". Recently, SOI materials have been identified as the first choice of the semiconductor materials for fabricating low voltage and low power circuits. In order to improve the working performance of the SOI circuit under the radiating circumstance, ion implantation of fluorine impurity into the insulator layers in SOI materials is used for hardening the thermal gate oxide layer. Proper implantation depth of fluorine would further improve radiate resistance performance of the SOI circuit. This paper describes the SIMS analysis results of fluorine impurity implantation profile at the interface between top silicon layer and oxide insulator layer.

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