摘要:
通过电离辐照对氮化镓基蓝光发光二极管器件有源区光/暗电流产生机制的研究,建立了电离辐照减小发光二极管有效输出功率电学模型.通过电离辐照对氮化镓基蓝光发光二极管器件有源区1/f 噪声影响机制的研究,建立了电离辐照增大发光二极管1/f 噪声的相关性模型.在I<1μA的小注入区,空间电荷区的复合电流随辐照剂量的增加而增加.同时,随着电离辐照产生缺陷的增加,1/f 噪声幅度增大.在I>1 mA的大注入条件下,由于串联电阻的影响占主导地位,表面复合速率和电流随辐照剂量的增加而增加.同时,随着电离辐照产生缺陷的增加,1/f 噪声幅度增大.根据辐照前后电流电压试验结果噪声测试结论,证实了实验结论与理论推导结果的一致性.在1μA
Abstract:
The electrical model that ionizing radiation reduces the effective power output of GaN-based blue light-emitting diode is pro-posed by investigating the light/dark current generation mechanism in active region of GaN-based blue light emitting diode device under ionizing irradiation. The model that the ionizing radiation increases the 1/f noise of GaN-based blue light-emitting diode device is proposed by studying the 1/f noise mechanism of the active region of GaN-based blue light-emitting diode device under exposure to ionizing radiation. In the small injection region (I<1 μA),the space charge region and the recombination current increase with irra-diation dose increasing. Meanwhile, with the increase of the ionizing-irradiation-generated defects, the 1/f noise amplitude increases. In the large injection region (I>1 mA), due to the dominant influence of the series resistance, the surface recombination velocity and current increases with irradiation dose increasing. Meanwhile, with the increase of ionizing-irradiation-generated defects, the 1/f noise amplitude increases. The I-V and 1/f noise test results before and after irradiation are in good agreement with theoretical results. In the middle injection region (1 μA
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