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80 keV N离子注入对ZnO薄膜结构的影响

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臧航, 王志光, 魏孔芳, 孙建荣, 姚存峰, 申铁龙, 马艺准, 杨成绍, 庞立龙, 朱亚斌. 2010: 80 keV N离子注入对ZnO薄膜结构的影响, 原子核物理评论, 27(1): 87-91.
引用本文: 臧航, 王志光, 魏孔芳, 孙建荣, 姚存峰, 申铁龙, 马艺准, 杨成绍, 庞立龙, 朱亚斌. 2010: 80 keV N离子注入对ZnO薄膜结构的影响, 原子核物理评论, 27(1): 87-91.
shu
ZANG Hang, WANG Zhi-guang, WEI Kong-fang, SUN Jian-rong, YAO Cun-feng, SHEN Tie-long, MA Yi-zhun, YANG Cheng-shao, PANG Li-long, ZHU Ya-bin. 2010: Effects of 80 keV N-ion Implantation on Structures of ZnO Films, Nuclear Physics Review, 27(1): 87-91.
Citation: ZANG Hang, WANG Zhi-guang, WEI Kong-fang, SUN Jian-rong, YAO Cun-feng, SHEN Tie-long, MA Yi-zhun, YANG Cheng-shao, PANG Li-long, ZHU Ya-bin. 2010: Effects of 80 keV N-ion Implantation on Structures of ZnO Films, Nuclear Physics Review, 27(1): 87-91.
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80 keV N离子注入对ZnO薄膜结构的影响

  • 中国科学院近代物理研究所,甘肃,兰州,730000;中国科学院研究生院,北京,100049

  • 中国科学院近代物理研究所,甘肃,兰州,730000

Effects of 80 keV N-ion Implantation on Structures of ZnO Films

  • 摘要: 室温下用80 keV N离子注入ZnO薄膜样品,注量分别为5.0×10~(14),5.0×10~(15)和5.0×10~(16) ions/cm~2,然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征.实验结果表明,由高度(002)择优取向的致密柱状晶构成的薄膜中,注入5.0×10~(15) ions/cm~2时,观测到缺陷生成和局域无序化现象,但薄膜总体结构仍保持柱状晶和(002)择优取向;随着注量的增大,晶格常数c和压应力呈增大趋势.对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论.
    Abstract: ZnO thin films were implanted at the room temperature by 80 keV N-ions to 5.0×10~(14),5.0×10~(15) or 5.0×10~(16) ions/cm~2,the structural characteristics of the samples were investigated using X-ray diffraction(XRD)spectrometer and transmission electron microscopy(TEM).It was found that the un-implanted ZnO films are constituted of columnar crystals which are very compact and of preferred c-axis orientation.After N-ion implantation,the crystal lattice constant and the biaxial compressive stress increased with the increasing of the N-implantation dose.In the 5.0×10~(16) N-ions/cm~2 implanted ZnO sample,a new XRD peak due to defects or N-dopants appeared.Moreover,defects and localized disordering in the 5.OX 10~(15) N-ions/cm~2 implanted ZnO films have been observed under high resolution TEM measurement.However,N-ion implantation could not change significantly the crystal structure of the ZnO films.Possible mechanism of the structural modification of ZnO films by N-ion implantation was briefly discussed.
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  • 刊出日期:  2010-03-20

80 keV N离子注入对ZnO薄膜结构的影响

  • 中国科学院近代物理研究所,甘肃,兰州,730000;中国科学院研究生院,北京,100049
  • 中国科学院近代物理研究所,甘肃,兰州,730000

摘要: 室温下用80 keV N离子注入ZnO薄膜样品,注量分别为5.0×10~(14),5.0×10~(15)和5.0×10~(16) ions/cm~2,然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征.实验结果表明,由高度(002)择优取向的致密柱状晶构成的薄膜中,注入5.0×10~(15) ions/cm~2时,观测到缺陷生成和局域无序化现象,但薄膜总体结构仍保持柱状晶和(002)择优取向;随着注量的增大,晶格常数c和压应力呈增大趋势.对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论.

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