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532nm长脉冲激光致GaAs热分解损伤的半解析法分析
Analysis of 532nm long pulse laser-induced thermal decomposition damage to GaAs by semi-analytical method
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摘要: 考虑到GaAs具有受热分解的特性，采用热传导理论和半解析法研究了波长532nm的毫秒量级长脉冲激光致GaAs的表面热分解损伤．首先，建立了激光辐照GaAs的二维轴对称瞬态温度场及表面热分解损伤阈值的计算模型，模拟了吸收率不同时，GaAs的瞬态温度场分布及热分解损伤阈值．计算结果表明：较高的吸收率引起GaAs表面的温升较高，但所需的热分解损伤阈值较低；增加作用激光能量密度，GaAs表面发生热分解损伤随之提前．本文研究结果对激光与GaAs相互作用及其损伤机理的研究具有指导意义和实用价值．Abstract: Considering the fact that the GaAs has the characteristics of thermal decomposition, the thermal decomposition damage to GaAs surface, induced by a 532 nm wavelength long pulse laser with a millisecond pulse width is studied by the heat conduction theoretical and semi-analytical method. First, the calculation models of two-dimensional axisymmetric transient temperature field and the surface thermal decomposition damage threshold for long pulse laser irradiation of GaAs are established, and the transient temperature fields and the thermal decomposition damage thresholds in GaAs with different absorption rates are simulated. The results show that the higher absorption rate causes the higher temperature rise on the surface of material, but the required decomposition damage energy density is lower. With the increase of laser energy density, the decomposition damage occurs more early. This paper has guiding significance and practical value for investigating the interaction between long pulse laser and GaAs and its damage mechanism.
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