分子束外延生长InGaN／A1N量子点的组分研究

物理学报

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胡懿彬, 郝智彪, 胡健楠, 钮浪, 汪莱, 罗毅. 2012: 分子束外延生长InGaN／A1N量子点的组分研究, 物理学报, 61(23): 479-483.

引用本文:

胡懿彬, 郝智彪, 胡健楠, 钮浪, 汪莱, 罗毅. 2012: 分子束外延生长InGaN／A1N量子点的组分研究, 物理学报, 61(23): 479-483.

2012: Studies on the composition of InGaN/AIN quantum dots grown by molecular beam epitaxy, Acta Physica Sinica, 61(23): 479-483.

Citation:

2012: Studies on the composition of InGaN/AIN quantum dots grown by molecular beam epitaxy, Acta Physica Sinica, 61(23): 479-483.

Studies on the composition of InGaN/AIN quantum dots grown by molecular beam epitaxy

摘要: 报道了分子束外延生长的绿光波段InGaN／A1N量子点材料，并综合考虑InGaN量子点的应变弛豫，以及应力和量子限制斯塔克效应对量子点发光波长的影响，提出了一种结合反射式高能电子衍射原位测量与光致荧光测量确定InGaN量子点组分的方法．
- InGaN /
- 量子点 /
- 反射式高能电子衍射
Abstract: In this article we report on the green-light wavelength InGaN/A1N quantum dots (QDs) grown by molecular beam epitaxy, and propose a method to determine the composition of the InGaN QDs by combining reflection high-energy electron diffraction in-situ measurement and photoluminescence measurement, in which the strain relaxation and the influences of strain and quantum-confined Stark effect on the exciton energy are taken into consideration.