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氮离子轰击能量对ta-C：N薄膜结构的影响
The effect of nitrogen ion bombarding energy on the bonding structure of nitrogenated tetrahedral amorphous carbon film
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摘要: 利用磁过滤真空阴极电弧技术制备了s矿键含量不小于80％的四面体非晶碳薄膜（ta—C），然后通过氮离子束改性技术制备了氮掺杂的四面体非晶碳（ta—C：N）薄膜．利用Raman光谱和X射线光电子能谱对薄膜结构的分析，研究了氮离子轰击能量对ta—C：N薄膜结构的影响．氮离子对ta—C薄膜的轰击，形成了氮掺杂的ta-C：N薄膜．氮离子轰击诱导了薄膜申sp^3键向sp^2键转化，以及CN键的形成．在ta—C：N薄膜中，氮掺杂的深度和浓度随着氮离子能量的增大而增大．ta-C：N薄膜中sp。键的含量和sp^2键团簇的尺寸随着氮离子轰击能量的增大而增加；在ta-C：N薄膜中，CN键主要由C—N键和C=N键构成，C—N键的含量随着氮离子轰击能量的增大而减小，但是C=N键含量随着氮离子轰击能量的增大而增大．在ta-C：N薄膜中不含有C≡N键结构．Abstract: The tetrahedral amorphous carbon （ta-C） films with more than 80% sp^3 in fraction are deposited by the filtered cathode vacuum arc technique. Then the energetic nitrogen （N） ions are used to bombard the ta-C films to fabricate nitrogenated tetrahedral amorphous carbon （ta-C：N） films. The composition and the structure of the films are analyzed by visible Raman spectrum and X-ray photoelectron spectroscopy. The result shows that the bombardment of energetic nitrogen ions can form CN bonds, convert C--C bonds into C =C bonds, and increase the size of sp^2 cluster. The CN bonds are composed of C =N bonds and C--N bonds. The content of C =N bonds increases with the N ion bombardment energy increasing, but the content of C--N bonds is inversely proportional to the increase of nitrogen ion energy. In addition, C≡N bonds do not exist in the films.
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