摘要:
本文以ZnCl_2,CrCl_3·6H_2O和氨水缓冲溶液为原料,在4T脉冲磁场下水热法制备了Cr掺杂ZnO稀磁半导体晶体,通过X射线衍射分析、扫描电子显微镜观察及采用振动样品磁强计进行磁性分析等,探讨了脉冲磁场对其微观结构及磁性能的影响.结果表明：Cr掺杂ZnO稀磁半导体晶体仍保持ZnO的六方纤锌矿结构,脉冲磁场具有促进晶粒生长及取向排列的作用,4T脉冲磁场条件下合成的Cr掺杂ZnO稀磁半导体具有良好的室温铁磁性,其饱和磁化强度（M_s）为0.068 emu/g,而无脉冲磁场情况下制备的样品室温下呈顺磁性,并且,脉冲磁场下制备将稀磁半导体的居里温度提高了16 K.
Abstract:
In this study,zinc chloride,chromic chloride,ammonium hydroxide and ammonium chloride are used as the source materials to prepare the crystalline Cr-doped ZnO diluted magnetic semiconductor by the hydrothermal method under a 4-T pulsed magnetic field.The structures and the morphologies of the samples are characterized by X-ray diffraction and scanning electron microscope. The magnetic analysis of the specimens is performed by vibrating sample magnetometer.The effects of pulsed magnetic field on the microstructure and the magnetic properties of the Cr-doped ZnO are discussed.The result indicates that all the samples still have hexagonal wurtzite structures.The pulsed magnetic field is conducive to promote the crystal growth orientation.The sample fabricated under pulsed magnetic field exhibits good room temperature ferromagnetism.The saturation magnetization is 0.068 emu/g.However, the sample synthesized without magnetic field shows paramagnetism at room temperature.The Curie temperature（T_c） of the Cr-doped ZnO is increased by 16 K through the pulsed magnetic field processing.
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