非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET的解析模型

李聪; 庄奕琪; 韩茹; 张丽; 包军林

西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

西北工业大学航空微电子中心,西安,710072

Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain

摘要: 为抑制短沟道效应和热载流子效应,提出了一种非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET新结构.通过在圆柱坐标系中精确求解三段连续的泊松方程,推导出新结构的沟道静电势、阈值电压以及亚阈值电流的解析模型.结果表明,新结构可有效抑制短沟道效应和热载流子效应,并具有较小的关态电流.此外,分析还表明栅交叠区的掺杂浓度对器件的亚阈值电流几乎没有影响,而栅电极功函数对亚阈值电流的影响较大.解析模型结果和三维数值仿真工具ISE所得结果高度符合.

关键词:

Abstract: A novel asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain is presented.The performance of the new structure is studied by developing physics-based analytical models for surface potential,threshold voltage,and subthreshold current.It is found that the new structure can effectively suppress the short-channel effects and the hot-carrier effects,and simultaneously reduce the off-state current.It is also revealed that subthreshold current is a slight function of doping concentration of overlapped region,while work-function of gate electrode has a strong influence on subthreshold current.The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE.

非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET的解析模型

西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

西北工业大学航空微电子中心,西安,710072

关键词:

Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain

西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

西北工业大学航空微电子中心,西安,710072

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