高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器

王杰; 韩勤; 杨晓红; 倪海桥; 贺继方; 王秀平

物理学报

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王杰, 韩勤, 杨晓红, 倪海桥, 贺继方, 王秀平. 2012: 高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器, 物理学报, 61(1): 499-503.

引用本文:

王杰, 韩勤, 杨晓红, 倪海桥, 贺继方, 王秀平. 2012: 高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器, 物理学报, 61(1): 499-503.

2012: High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs, Acta Physica Sinica, 61(1): 499-503.

Citation:

2012: High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs, Acta Physica Sinica, 61(1): 499-503.

高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器

中国科学院半导体研究所,集成光电子学国家重点实验室,北京100083
中国科学院半导体研究所,超晶格国家重点实验室,北京100083

High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs

摘要: 研制了一种GaAs基波长可调谐共振腔增强型探测器.采用分子束外延设备生长In_（0.25）Ga_（0.75）As/GaAs量子阱作为器件的有源区,无偏压时器件的响应峰波长在1071 nm,器件在21 V的直流调谐电压下,实现了波长大于23 nm的调谐.统计结果表明,当调谐电压大于5 V时,调谐电压与响应波长之间具有稳定、精确的对应关系,且近似线性调谐,同时对器件响应峰的特性进行了理论分析.
- GaAs /
- 共振腔增强型探测器 /
- 高稳定 /
- 线性调谐
Abstract: A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated.The quantum wells of In_（0.25）Ga（0.75）As/GaAs in the active region are grown by molecular beam epitaxy.The peak of the response spectrum at 0 work bias is located at 1071 nm.When the tuning voltage rises from 0 V to 21 V,the peak shows a blue shift of 23 nm,reaching 1048 nm.Statistical results show that there is a stable accurate corresponding relation between the tuning voltage and the response peak.The relation is approximately linear when the tuning voltage is greater than 5 V.Some theoretical analysis is performed on the test results.

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高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器

中国科学院半导体研究所,集成光电子学国家重点实验室,北京100083
中国科学院半导体研究所,超晶格国家重点实验室,北京100083

关键词:

摘要: 研制了一种GaAs基波长可调谐共振腔增强型探测器.采用分子束外延设备生长In_（0.25）Ga_（0.75）As/GaAs量子阱作为器件的有源区,无偏压时器件的响应峰波长在1071 nm,器件在21 V的直流调谐电压下,实现了波长大于23 nm的调谐.统计结果表明,当调谐电压大于5 V时,调谐电压与响应波长之间具有稳定、精确的对应关系,且近似线性调谐,同时对器件响应峰的特性进行了理论分析.

English Abstract

High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs

中国科学院半导体研究所,集成光电子学国家重点实验室,北京100083
中国科学院半导体研究所,超晶格国家重点实验室,北京100083

Keywords:

Abstract: A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated.The quantum wells of In_（0.25）Ga（0.75）As/GaAs in the active region are grown by molecular beam epitaxy.The peak of the response spectrum at 0 work bias is located at 1071 nm.When the tuning voltage rises from 0 V to 21 V,the peak shows a blue shift of 23 nm,reaching 1048 nm.Statistical results show that there is a stable accurate corresponding relation between the tuning voltage and the response peak.The relation is approximately linear when the tuning voltage is greater than 5 V.Some theoretical analysis is performed on the test results.

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高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器

High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs

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高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器

English Abstract

High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs

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