摘要:
采用等离子体增强化学气相沉积高低频交替生长法生长了SiO_2/Si_3N_4透明介质分布式：Bragg反射镜（DDBR）,提出了对DDBR采用干、湿法并用的腐蚀方法.采用传输矩阵法理论分析了DDBR,得出了为满足出光增益要求的反射率和DDBR结构.使用光致发光（PL）谱仪测量分析了DDBR反射谱和光致发光谱,获得了使光致发光谱辐射增强的DDBR结构,在整个光致发光谱380-780 nm波段,整体辐射增强1.058倍,在谐振波长处辐射增强1.5倍,半峰全宽值由23 nm变窄为10.5nm,获得了很好的光谱纯度.利用最优DDBR结构制成了高性能共振腔发光二极管器件,与普通结构相比,实现了低开启电压1.78 V;在20 mA注入电流下,轴向光强提高了20%,光功率和光效分别提高了27.7%和26.8%,光功率衰减缓慢;在O-100 mA注入电流下,没有明显的下降趋势,表现出了良好的温度稳定性.
Abstract:
Dielectric distributed Bragg reflectors（DDBRs） with SiO_2/Si_3N_4 are grown by PECVD alternately.For the etching of DDBR, dry and wet etching methods are both used.The reflectivity of DDBR is calculated by transfer matrix method,and the high performance DDBR structure is fabricated to obtain optimal reliability,we find that the enhancement factor along the cavity axis and the integrated emission enhancement factor of RCLED with 1.5 RC DDBR are 1.058 and 1.5 respectively,a full width at half maximum is 10.5 nm by PL analysis.Then,high performance RCLEDs are fabricated by using an optimal DDBR structure.The devices with DDBR show many advantages：a lower turn-on voltage of 1.78 V,under 20 mA injection current,the output power and the luminous efficiency of the device with/without DDBR gain the improvements of 27.7%and 26.8%respectively,under 0-100 mA injection current,the output power has unconspicuous downtrend,better characteristic saturation of optical power and temperature stability.
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