摘要:
以丝阵内爆零维模型为基础,采用Pspice模拟行为建模方法,建立了丝阵内爆动态电感与Z箍缩驱动器耦合的全电路模型,实现驱动器放电过程与丝阵内爆过程的自洽求解,并研究了丝阵参数、电路参数对内爆过程的影响.结果表明：丝阵负载与驱动器存在强耦合关系,丝阵参数、电路参数对丝阵峰值箍缩电流、内爆时间、内爆动能影响很大;在驱动器参数不变,内爆时间不超过电路固有放电周期1/4的前提下,峰值箍缩电流、内爆时间、内爆动能随丝阵质量的增加而增大,内爆时间随丝阵初始半径的增加而增大;在丝阵参数不变时,随着驱动器等效电容的增大,内爆时间减小,丝阵内爆动能增大,但驱动器储能转化为内爆动能的效率却先增大后减小.对于特定的驱动器,优化的丝阵参数应使内爆过程充分利用驱动器固有放电周期的上升沿,使丝阵快速收缩的时间起点接近电路固有放电周期的四分之一,以获得最大的动能效率.
Abstract:
Self-consistent circuit solution of Z-pinch driver discharging and wire array implosion is realized via Pspice analog behavioral modeling （ABM） based on the 0-dimensional implosion model.The influence of wire array and circuit parameters on implosion process is investigated using the method.Results show that wire array as its load is strongly coupled with Z-pinch driver.The maximum pinch current,the implosion time and the maximum kinetic energy （Ek） transferring to wire array are very sensitive to driver and wire array parameters.When the driver doesnot change and implosion time doesnot exceed a quarter of oscillation periods,the maximum pinch current,the implosion time and the maximum Ek increase while wire array mass increasing,and implosion time decreases as initial wire array radius increases.With keeping wire array unchanged,the implosion time decreases and implosion time increases as capacitance of driver increases,but the Ek efficiency firstly increases then decreases.The optimal array parameters for a given driver should make the implosion fully use the rising edge of current pulse,and make the pinch time close to a quarter of oscillation period,so that the implosion process could obtain maximum Ek efficiency.
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