摘要:
采用离子注入法制备了钴离子掺杂的金红石相TiO2样品;离子注入能量、注量分别为40keV（1×1016cm-2）,80keV（5×1015,1×1016,5×1016,1×1017cm-2）,120keV（1×1016cm-2）.通过XRD,XPS和UV-Vis等手段对掺杂前后样品的结构和光学性能进行了表征,分析了掺杂元素在金红石TiO2中的存在形式.XRD测试表明随着注入能量的增加晶体的损伤程度增加.UV-Vis测试表明掺杂后所有样品在可见光区的吸收增强;并且随着注量的增加,注量为5×1015cm-2到5×1016cm-2范围内注入样品的光学带隙逐渐变小.
关键词:
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钴
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二氧化钛
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离子注入
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掺杂
Abstract:
Ion implantation technique is used for doping Co＋to single crystal TiO2（001）.The implanted energies and the fluences of Co＋ are 40keV and 1×1016cm-2;80 keV and 5×1015,1×1016,5×1016,1×1017cm-2;120 keV and 1×1016cm-2,respectively.And then,the structural and the optical properties of all samples are characterized by using X-ray photoelectron spectroscopy （XPS）,X-ray powder diffraction （XRD）,UV - Vis diffuse reflectance spectroscopy （UV-Vis DRS）,and these impurities in implanted samples are also analyzed.From the XRD spectra of implanted samples we observe that the greater damage is caused with the increase of the kinetic energy of incident ions.UV - Vis diffuse reflectance spectroscopy measurement shows that the absorbance of visible band is enhanced in all the implanted samples,and the optical band gap decreases with implanted ion fluence increasing from 5×1015cm-2 to 5×1016cm-2.
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