[1] Choe H H. Basic study of a glass substrate in dry etching system[J]. Vacuum,2006,81(3):344−346 doi: 10.1016/j.vacuum.2006.06.010
[2] Goodman D L. Effect of wafer bow on electrostatic chucking and back side gas cooling[J]. Journal of Applied Physics,2008,104(12):124902 doi: 10.1063/1.3043843
[3] Wright D R. Chen L, Federlin P, et al. Manufacturing issues of electrostatic chucks[J]. Journal of Vacuum Science and Technology B,1995,13(4):1910−1916 doi: 10.1116/1.588108
[4] Kurkowski P, Drizlikh S, Sarver R, et al. Effects of wafer bow and warpage on performance of electrostatic chucks in high volume manufacturing[C]. Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI. Munich: IEEE, 2005: 127-129
[5] Chang C H. Leou K C, Lin C, et al. Real-time control of ion density and ion energy in chlorine inductively coupled plasma etch processing[J]. Journal of Vacuum Science and Technology A,2003,21(4):1183−1187 doi: 10.1116/1.1575222
[6] Choi D Y. Kim N H, Kim S Y. Reduction of loading effects with the sufficient vertical profile for deep trench silicon etching by using decoupled plasma sources[J]. Journal of Materials Processing Technology,2009,209(17):5818−5829 doi: 10.1016/j.jmatprotec.2009.06.014
[7] Abraham I C. Woodworth J R, Riley M E, et al. Electrical and plasma property measurements of a deep reactive ion etching Bosch process[J]. Journal of Vacuum Science and Technology B,2003,21(3):1112−1117 doi: 10.1116/1.1565145
[8] Wright D R. Hartman D C, Sridharan U C, et al. Low temperature etch chuck: modeling and experimental results of heat transfer and wafer temperature[J]. Journal of Vacuum Science and Technology A,1992,10(4):1065−1070 doi: 10.1116/1.578203
[9] Meyer J A. Kirmse K H R, Jenq J S, et al. Experiments with back side gas cooling using an electrostatic wafer holder in an electron cyclotron resonance etching tool[J]. Applied Physics Letters,1994,64(15):1926−1928 doi: 10.1063/1.111744
[10] Shan H. Pu B Y, Gao H, et al. Process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck[J]. Journal of Vacuum Science and Technology B,1996,14(1):521−526 doi: 10.1116/1.588507
[11] Kalkowski G, Peschel T, Hassall G, et al. Investigations into an electrostatic chuck design for 450 mm Si wafer[C]. Starikov A eds. Proceedings of SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, San Jose, USA, 12 February 2012, paper no. 83242Z, pp. 1-9. Bellingham: SPIE
[12] Qiu X. Tang R, Zhu J, et al. The effects of temperature, relative humidity and reducing gases on the ultraviolet response of ZnO based film bulk acoustic-wave resonator[J]. Sensors and Actuators B:Chemical,2011,151(2):360−364 doi: 10.1016/j.snb.2010.07.052
[13] Qin S. McTeer A. Wafer dependence of Johnsen-Rahbek type electrostatic chuck for semiconductor processes[J]. Journal of Applied Physics,2007,102(6):064901 doi: 10.1063/1.2778633
[14] Watanabe T. Kitabayashi T, Nakayama C. Electrostatic force and absorption current of alumina electrostatic chuck[J]. Japanese Journal of Applied Physics,1992,31(7):2145−2150
[15] Field J. Electrostatic wafer clamping for next-generation manufacturing[J]. Solid State Technology,1994,37(9):91−93
[16] Wardly G A. Electrostatic wafer chuck for electron beam microfabrication[J]. Review of Scientific Instruments,1973,44(10):1506−1509 doi: 10.1063/1.1685985
[17] Shim G II. Sugai H. Temporal analysis of electrostatic chuck characteristics in inductively coupled plasma[J]. Plasma and Fusion Research,2008,3:028 doi: 10.1585/pfr.3.028
[18] Wang K S. Cheng J, Zhong Y, Ji L H. A novel measuring method of clamping force for electrostatic chuck in semiconductor devices[J]. Journal of Semiconductors,2016,37:044012 doi: 10.1088/1674-4926/37/4/044012