高级搜索

表面态调控对GaN荧光光谱的影响

,  ,  ,  ,  ,  ,  ,  , 

downloadPDF

上一篇

下一篇

周楠, 郑强, 胡北辰, 石德权, 苗春雨, 马春雨, 梁红伟, 郝胜智, 张庆瑜. 2014: 表面态调控对GaN荧光光谱的影响, 物理学报, null(13): 137802. doi: 10.7498/aps.63.137802
引用本文: 周楠, 郑强, 胡北辰, 石德权, 苗春雨, 马春雨, 梁红伟, 郝胜智, 张庆瑜. 2014: 表面态调控对GaN荧光光谱的影响, 物理学报, null(13): 137802. doi: 10.7498/aps.63.137802
shu
Zhou Nan, Zheng Qiang, Hu Bei-Chen, Shi De-Quan, Miao Chun-Yu, Ma Chun-Yu, Liang Hong-Wei, Hao Sheng-Zhi, Zhang Qing-Yu. 2014: Effects of controlled surface states on the photoluminescence emission of GaN film, Acta Physica Sinica, null(13): 137802. doi: 10.7498/aps.63.137802
Citation: Zhou Nan, Zheng Qiang, Hu Bei-Chen, Shi De-Quan, Miao Chun-Yu, Ma Chun-Yu, Liang Hong-Wei, Hao Sheng-Zhi, Zhang Qing-Yu. 2014: Effects of controlled surface states on the photoluminescence emission of GaN film, Acta Physica Sinica, null(13): 137802. doi: 10.7498/aps.63.137802
shu

表面态调控对GaN荧光光谱的影响

  • 大连理工大学物理与光电工程学院三束材料改性教育部重点实验室,大连,116024

Effects of controlled surface states on the photoluminescence emission of GaN film

  • 摘要: 采用高阻本征GaN薄膜，通过H3PO4刻蚀和SiOxNy薄膜钝化方法对GaN薄膜进行表面态调控，研究了表面态调控对GaN薄膜光致荧光光谱的影响。研究发现， H3 PO4刻蚀对改善GaN薄膜的紫外荧光发射作用不大，但显著增加可见荧光的强度；经SiOx Ny薄膜表面钝化的GaN紫外荧光量子效率增加12-13倍，同时对可见荧光有明显增加。通过比较H3PO4刻蚀和SiOxNy薄膜钝化的室温和低温荧光光谱，探讨了表面态调控对GaN紫外荧光、蓝带荧光和黄带荧光的影响及相关物理机理。
    Abstract: Hot phosphor acid (H3PO4) etching and/or SiOxNy surface passivation are used to change the surface states of high-resistance intrinsic GaN films. The films are investigated to reveal the influence of controlled surface states on photoluminescence (PL) emission. It is found that H3PO4 etching cannot improve the ultraviolet (UV) PL emission obviously, but the PL spectrum in the range of visible light is considerably enhanced. After passivation with SiOxNy film, the quantum e?ciency of UV PL is increased by a factor of 12–13. Meanwhile, the visible PL is significantly enhanced. By analyzing the PL spectra of the etched and passivated samples obtained at room temperature and low temperatures, we discuss the role of surface states in PL emission in the range of UV, blue and yellow bands, and the related physical mechanisms.
  • 加载中
  • 加载中
计量
  • 文章访问数:  394
  • HTML全文浏览数:  197
  • PDF下载数:  0
  • 施引文献:  0
出版历程
  • 刊出日期:  2014-07-15

表面态调控对GaN荧光光谱的影响

  • 大连理工大学物理与光电工程学院三束材料改性教育部重点实验室,大连,116024

摘要: 采用高阻本征GaN薄膜，通过H3PO4刻蚀和SiOxNy薄膜钝化方法对GaN薄膜进行表面态调控，研究了表面态调控对GaN薄膜光致荧光光谱的影响。研究发现， H3 PO4刻蚀对改善GaN薄膜的紫外荧光发射作用不大，但显著增加可见荧光的强度；经SiOx Ny薄膜表面钝化的GaN紫外荧光量子效率增加12-13倍，同时对可见荧光有明显增加。通过比较H3PO4刻蚀和SiOxNy薄膜钝化的室温和低温荧光光谱，探讨了表面态调控对GaN紫外荧光、蓝带荧光和黄带荧光的影响及相关物理机理。

English Abstract

    全文HTML

参考文献 (0)

目录

/

返回文章
返回