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硅基III-V族量子点激光器的发展现状和前景

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王霆, 张建军, Huiyun Liu. 2015: 硅基III-V族量子点激光器的发展现状和前景, 物理学报, null(20): 204209. doi: 10.7498/aps.64.204209
引用本文: 王霆, 张建军, Huiyun Liu. 2015: 硅基III-V族量子点激光器的发展现状和前景, 物理学报, null(20): 204209. doi: 10.7498/aps.64.204209
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Wang Ting, Zhang Jian-Jun, Huiyun Liu. 2015: Quantum dot lasers on silicon substrate for silicon photonic integration and their prospect, Acta Physica Sinica, null(20): 204209. doi: 10.7498/aps.64.204209
Citation: Wang Ting, Zhang Jian-Jun, Huiyun Liu. 2015: Quantum dot lasers on silicon substrate for silicon photonic integration and their prospect, Acta Physica Sinica, null(20): 204209. doi: 10.7498/aps.64.204209
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硅基III-V族量子点激光器的发展现状和前景

  • 中国科学院物理研究所,北京,100190

  • Department of Electrical and Electronic Engineering，University College London，Torrington Place，London，UK

Quantum dot lasers on silicon substrate for silicon photonic integration and their prospect

  • 摘要: 本文简要综述了硅基III-V族量子点激光器的研究进展.在介绍了量子点激光器的优势和发展后，重点介绍了近年来硅基、锗基III-V族量子点材料生长上的突破性进展及所带来的器件性能的大幅提高，如实现了锗基和硅基1.3μm InAs/GaAs量子点激光器的室温激射，锗基量子点激光器的阈值电流低至55.2 A/cm2并可达60?C以上的连续激射，通过锗硅虚拟衬底，在硅基上实现了30?C下以16.6 mW的输出功率达到4600 h的激光寿命，这些突破性的进展为硅基光电子集成打开了新的大门。
    Abstract: In this article, the recent progress of III-V quantum dot lasers on silicon substrates for silicon photonic integration is reviewed. By introducing various epitaxial techniques, room-temperature 1.3-μm InAs/GaAs quantum dot laser on Si, Ge and SiGe substrates have been achieved respectively. Quantum dot lasers on Ge substrate has an ultra-low threshold current density of 55.2 A/cm2 at room temperature, which can operate over 60 ?C in continuous-wave mode. Futhermore, by using the SiGe virtual substrate, at 30 ?C and an output power of 16.6 mW, a laser lifetime of 4600 h has been reached, which indicates a bright future for the large-scale photonic integration.
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  • 刊出日期:  2015-10-30

硅基III-V族量子点激光器的发展现状和前景

  • 中国科学院物理研究所,北京,100190
  • Department of Electrical and Electronic Engineering，University College London，Torrington Place，London，UK

摘要: 本文简要综述了硅基III-V族量子点激光器的研究进展.在介绍了量子点激光器的优势和发展后，重点介绍了近年来硅基、锗基III-V族量子点材料生长上的突破性进展及所带来的器件性能的大幅提高，如实现了锗基和硅基1.3μm InAs/GaAs量子点激光器的室温激射，锗基量子点激光器的阈值电流低至55.2 A/cm2并可达60?C以上的连续激射，通过锗硅虚拟衬底，在硅基上实现了30?C下以16.6 mW的输出功率达到4600 h的激光寿命，这些突破性的进展为硅基光电子集成打开了新的大门。

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