集成门极换流晶闸管开关自箝位模式下的鲁棒性

杨武华; 沈思豪; 贾丽萍; 张超; 张如亮; 王彩琳

doi:10.7498/aps.74.20250120

集成门极换流晶闸管开关自箝位模式下的鲁棒性

西安理工大学电子工程系, 西安　710048

通讯作者: E-mail: yangwuhua@xaut.edu.cn.;

中图分类号: 85.30.Mn, 85.30.Pq, 85.30.Tv

Robustness of integrated gate commutated thyristor in switching self-clamping mode

Department of Electronic and Engineering, Xi’an University of Technology, Xi’an 710048, China

Corresponding author: E-mail: yangwuhua@xaut.edu.cn.;

MSC: 85.30.Mn, 85.30.Pq, 85.30.Tv

摘要: 基于多单元结构模型, 对集成门极换流晶闸管(IGCT)在过应力条件下的关断特性进行了仿真. 发现在开关自箝位模式(SSCM)下, 虽然器件的端电压被箝位, 但其内部产生了移动速度非常缓慢的电流丝, 从而使得器件非常容易发生重触发、甚至热击穿. 并且, IGCT静态雪崩击穿特性决定了器件在SSCM下电流丝的性质. IGCT寄生pnp晶体管的共基极电流增益α_pnp越大, SSCM下雪崩诱发电流丝的强度越大, 移动速度越慢, 从而大大降低器件的鲁棒性.
- 集成门极换流晶闸管(IGCT) /
- 开关自箝位 /
- 雪崩 /
- 电流丝 /
- 鲁棒性
Abstract: As a thyristor-like device, integrated gate commutated thyristor (IGCT) is more applicable to the high-voltage and high-power fields due to the lower on-state voltage drop, and a combination of transparent anode and hard drive enables IGCT to turn off faster and more reliably. However, with an increase in power capacity of IGCT, the reliability of IGCT is becoming an increasing concern.Based on the multi-cell structure model, the turn-off characteristics and robustness of IGCT under over-stress conditions are studied in this work. The results show that during GCT turning off, the modulation of free carriers to the electric field in the space charge region makes the dynamic avalanche effect occur at the anode-cathode voltage much lower than the rated blocking voltage of the device, and the avalanche-induced current filament effect may occur due to the distortion of electric field, resulting in negative differential resistance effect at strong dynamic avalanche. In comparison, the behavioral characteristics of current filament at different stages of turn-off behave differently.During the voltage rising period when IGCT turns off, the avalanche-induced current filament can move rapidly, which will not cause the temperature to rise too much and has little influence on the robustness of the device. In contrast, when the anode-cathode voltage rises close to the static avalanche breakdown voltage, the switching self-clamping mode (SSCM) will occur, and the device will operate in its static avalanche breakdown mode. If the device operates on the negative differential resistance (NDR) branch of its static avalanche breakdown characteristic curve, a very slow moving current filament driven only by temperature rise will appear. This makes the power consumption that is required to be borne by the entire device undertaken only by the area where the current filament is located, thus resulting in a very high local current density and a large local temperature rise, and the device is easy to re-trigger or thermally break down.The static avalanche breakdown characteristics of IGCT determine the nature of the current filament under SSCM. The larger the common-base current gain α_pnp of the parasitic pnp transistor of IGCT, the stronger the avalanche-induced current filament under SSCM is and the slower its movement speed, thereby significantly reducing the robustness of the device. Therefore, in order to improve the robustness of the device under SSCM, more precise control of α_pnp is required during the designing of GCT chips.
- integrated gate commutated thyristor (IGCT) /
- switching self-clamping /
- avalanche /
- current filament /
- robustness. .

图 1 IGCT组件、管芯与结构剖面示意图　(a) IGCT组件; (b) 直径为91 mm的GCT管芯; (c) GCT单元的结构剖面示意图

Figure 1. IGCT module and chip: (a) IGCT module; (b) GCT chip with a diameter of 91 mm; (c) structural profile diagram of GCT unit.

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图 2 IGCT的关断测试电路

Figure 2. Turn-off test circuit of IGCT.

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图 3 4.5 kV IGCT过应力关断测试中的SSCM现象(V_DC = 2900 V, I_T = 5600 A, L_σ = 1 μH, 初始温度T = 300 K)

Figure 3. The occurrence of SSCM during the test of 4.5 kV IGCT turn-off (V_DC = 2900 V, I_T = 5600 A, L_σ = 1 μH, T = 300 K at the initial stage)

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图 4 5单元IGCT结构仿真模型

Figure 4. Structural model of IGCT with 5 cells used for simulation.

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图 5 不同阳极区掺杂下IGCT过应力下的关断特性曲线(V_DC = 2900 V, I_T = 5600 A, L_σ = 1 μH, T = 300 K)

Figure 5. Turn-off curves of IGCT with different doping concentrations of anode region at over-stress (V_DC = 2900 V, I_T = 5600 A, L_σ = 1 μH, T = 300 K).

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图 6 IGCT不同阳极区掺杂浓度下的关断特性及各个单元电流的抽取　(a) N_A1; (b) N_A2; (c) N_A3; (d) N_A4

Figure 6. Turn-off characteristics of IGCT at different anode doping concentrations and current extraction of each cell: (a) N_A1; (b) N_A2; (c) N_A3; (d) N_A4.

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图 7 图6(d)中不同时刻器件内部的电流密度分布

Figure 7. Current density distribution inside the device at different times in Fig. 6(d).

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图 8 阳极区掺杂为N_A1时IGCT关断特性的电热耦合仿真结果(V_DC = 2900 V, I_T = 5600 A, L_σ = 1 μH, 初始T = 300 K)

Figure 8. Electrothermal simulation results of IGCT turn-off characteristics at the N_A1 of the anode region doping (V_DC = 2900 V, I_T = 5600 A, L_σ = 1 μH, T = 300 K at the initial stage).

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图 9 IGCT SSCM期间雪崩产生电流丝在n⁺阴极区下方引起的强烈电流聚集效应(对应图8中t = 501.6 μs)

Figure 9. Strong current crowding caused by current filament of IGCT under n⁺ cathode region during SSCM (Corresponding to t = 501.6 μs in Fig. 8).

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图 10 IGCT过应力关断过程中电压上升阶段(t = 501, 502 μs)与电压箝位期间(t = 505, 508 μs)器件内部的空穴浓度p与电场强度E纵向分布曲线(对应图6(d))

Figure 10. Vertical distribution curves of hole concentration p and electric field intensity E inside the device during the voltage rise stage (t = 501, 502 μs) and voltage clamp period (t = 505, 508 μs) during the IGCT over-stress turn-off (Corresponding to Fig. 6(d)).

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图 11 不同阳极区掺杂浓度下, IGCT在常温(300 K)与高温(400 K)下的雪崩击穿特性曲线

Figure 11. The avalanche breakdown curves of 4.5 kV AS-GCT with different anode doping at high (400 K) and room temperature (300 K).

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图 12 IGCT在雪崩击穿模式下, 器件的α_pnp与雪崩产生电流密度J_A的关系曲线

Figure 12. The relationship curves of α_pnp and J_A under the avalanche breakdown of IGCT.

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表 1 4.5 kV非对称GCT的主要结构参数

Table 1. Main structural parameters of 4.5 kV asymmetry GCT.

	掺杂(峰值) 浓度/cm^–3	厚度/宽度/μm
n-基区	1×10¹³	厚度: 370
n场阻止层	2×10¹⁶	厚度: 47
p+透明阳极区	1×10¹⁷—5×10¹⁸	厚度: 3
浅p基区	5×10¹⁶	p基区整体厚度: 110
深p基区	—	p基区整体厚度: 110
n+阴极区	1×10²⁰	厚度/宽度: 20/200
单元宽度(阴极条宽度)	—	400

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1. 引　言

随着功率器件电压等级的提升, 器件耐压与功耗之间的矛盾越来越突出. 作为晶闸管类器件, 集成门极换流晶闸管(IGCT)导通时的双侧载流子注入使其具有较低的导通压降, 同时, “硬驱动”技术的采用大大增加了器件的开关速度和安全工作区. 近些年, 随着国内对IGCT芯片制造与驱动技术关键问题的攻克, IGCT正在电力系统的某些领域逐渐替代传统的晶闸管, 比如高压直流输电与风力发电的直流断路器、静止同步补偿器, 以及多电平转换器等^[1–4]. 当IGCT应用于以上场合时, 负载多为感性, 且器件容易遭受高电压、大电流的冲击. 于是, 器件出厂前需在过应力条件下对其反偏安全工作区(RBSOA)进行测试.

开关自箝位模式(SSCM)是指双极型功率器件进行RBSOA测试时, 由于施加给器件的关断应力较大(即高的电源电压、大的关断电流, 以及高的杂散电感), 在器件端电压上升至电源电压之前, 器件内部存储的等离子体被突然耗尽, 器件端电压迅速爬升并被箝位至接近器件静态雪崩击穿电压的现象. 之前关于功率二极管、IGBT, 以及IGCT的SSCM研究表明^[5–8], 类似于IGBT固有的短路特性是一种过流保护机制, SSCM对于设计合理的器件与系统是一种过压保护机制, 由于器件的端电压在SSCM下被箝位. 对于关断过程相当于基极开路pnp晶体管的IGBT与IGCT, 为了增强器件在SSCM期间电压箝位的稳定性, 防止负阻效应的发生^[5,7], 需将器件寄生pnp晶体管的电流增益α_pnp设计地尽可能高.

然而, 之前的研究仅仅关注了器件的端特性, 本文对于IGCT在SSCM期间器件内部物理效应的研究发现, 虽然从器件的端特性上考虑, 端电压被稳定箝位, 但是器件内部发生了具有毁坏性的电流聚集效应, 并且这种效应随器件α_pnp的增加而愈发强烈.

5. 结　论

IGCT在过应力关断过程中, 在电压上升阶段由动态雪崩效应诱发的电流丝是快速移动的, 不会造成太大的温升, 不会对器件鲁棒性造成较大的影响; 然而, 一旦电压上升至静态雪崩击穿电压附近被箝位, SSCM发生, 器件将工作在其静态雪崩击穿模式下, 若器件工作在其静态雪崩击穿特性曲线上的NDR分支上, 器件内部将诱发仅依靠温升驱动、移动速度非常缓慢的电流丝, 这会使得本来需要整个器件承受的功耗仅靠电流丝所在的区域来承受, 从而造成非常高电流密度的电流丝与较大的温升, 器件很容易发生重触发或热击穿.

IGCT在SSCM下产生电流丝的强度与移动速度取决于器件的α_pnp. IGCT静态雪崩击穿曲线上由NDR1 branch向PDR分支转化的电压谷值点V对应的电流密度决定了电流丝的强度, 温升引起的雪崩击穿特性曲线的漂移量ΔV_AK决定了电流丝的移动速度. 随着器件α_pnp的增加, V点对应的电流密度越高, ΔV_AK越小, 这会使得电流丝的强度越强, 电流丝的移动速度越慢, 同时, 由于SSCM箝位时间也随α_pnp的增加而增长, 从而大大降低器件的鲁棒性. 因此, 在进行GCT芯片设计时, 为了提高器件在SSCM下的鲁棒性, 对于α_pnp需较精确地控制, 一方面防止α_pnp过小导致SSCM期间高低结处的电场过高而发生双侧雪崩增强效应, 另一方面防止α_pnp过大造成SSCM期间雪崩诱发电流丝的强度过大与移动速度过慢; 同时在工艺制造允许的条件下, 尽可能地增加p基区的结深, 降低n⁺阴极区下方的横向电阻以减小电流丝流经此处时的横向压降, 从而抑制重触发效应.

参考文献 (20)

集成门极换流晶闸管开关自箝位模式下的鲁棒性

通讯作者: E-mail: yangwuhua@xaut.edu.cn.;

Robustness of integrated gate commutated thyristor in switching self-clamping mode

Corresponding author: E-mail: yangwuhua@xaut.edu.cn.;

计量

集成门极换流晶闸管开关自箝位模式下的鲁棒性

通讯作者: E-mail: yangwuhua@xaut.edu.cn.;

English Abstract

Robustness of integrated gate commutated thyristor in switching self-clamping mode

Corresponding author: E-mail: yangwuhua@xaut.edu.cn.;

全文HTML

2.1. 测试分析

2.2. 仿真分析

3.1. 电流丝的形成

3.2. 电流丝的性质

4.1. SSCM的箝位机理

4.2. 电流丝的形成机理与影响机理

目录

集成门极换流晶闸管开关自箝位模式下的鲁棒性

通讯作者: E-mail: yangwuhua@xaut.edu.cn.;

Robustness of integrated gate commutated thyristor in switching self-clamping mode

Corresponding author: E-mail: yangwuhua@xaut.edu.cn.;

计量

出版历程

集成门极换流晶闸管开关自箝位模式下的鲁棒性

通讯作者: E-mail: yangwuhua@xaut.edu.cn.;

English Abstract

Robustness of integrated gate commutated thyristor in switching self-clamping mode

Corresponding author: E-mail: yangwuhua@xaut.edu.cn.;

全文HTML

2.1. 测试分析

2.2. 仿真分析

3.1. 电流丝的形成

3.2. 电流丝的性质

4.1. SSCM的箝位机理

4.2. 电流丝的形成机理与影响机理

目录